InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications
| dc.citation.epage | 691 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 688 | en_US |
| dc.citation.volume | 50 | en_US |
| dc.contributor.author | Yang, Hung-Pin D. | en_US |
| dc.contributor.author | Yeh, Zao-En | en_US |
| dc.contributor.author | Lin, Gray | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Chi, Jim Y. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:14:01Z | |
| dc.date.available | 2014-12-08T15:14:01Z | |
| dc.date.issued | 2010-05-01 | en_US |
| dc.description.abstract | An InGaAs submonolayer (SML) quantum-dot photonic-crystal light-emitting diode (QD PhC-LED) with for fiber-optic applications is reported. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 0.34 mW at 20 mA has been obtained in the 980 nm range. (C) 2010 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.microrel.2010.01.044 | en_US |
| dc.identifier.issn | 0026-2714 | en_US |
| dc.identifier.journal | MICROELECTRONICS RELIABILITY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.microrel.2010.01.044 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10788 | |
| dc.identifier.wosnumber | WOS:000278728700026 | |
| dc.language.iso | en_US | en_US |
| dc.title | InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications | en_US |
| dc.type | Article; Proceedings Paper | en_US |