Properties of Si-C-N films prepared on Si substrate using cobalt interfacial layers

Abstract

A microwave plasma chemical vapor deposition (MPCVD) process was successfully used to synthesize Si-C-N films. The film properties were tuned by deposition parameters and engineering interfacial Co layers on Si substrates. The films were deposited by using CH4, N-2, and additional solid Si columns as raw material sources. The films were characterized by scanning electron microscopy (SEM) for film morphologies, X-ray photo-emission spectroscopy (XPS) and cathodoluminescence (CL) spectroscopy for bonding structure and band gap analyses. The results show that the application of Co interlayer can have the following effects: (1) it can change film morphology from (100) preferred orientation to become pyramidal structure, and the band gap from 2.93 to 4.00 eV; (2) it may possess the additional Si(2p)-Si bonding in the films. By adding additional Si source, the atomic ratio of Si:C:N can change significantly with the decrease in carbon content of films, the film structure may vary from amorphous to crystalline and possess additional C(1s)=N bonding (or N(1s)=C bonding). In summary, the composition, morphology, bonding and crystal structures of Si-C-N films have been successfully demonstrated to be manipulated through applications of Co interlayer and additional Si source. (C) 2001 Elsevier Science B.V. All rights reserved.