White-light emitting ZnO-SiO2 nanocomposite thin films prepared by sputtering method
| dc.citation.epage | 538 | en_US |
| dc.citation.spage | 533 | en_US |
| dc.citation.volume | 891 | en_US |
| dc.contributor.author | Peng, Yu-Yun | en_US |
| dc.contributor.author | Hsieh, Tsung-Eong | en_US |
| dc.contributor.author | Hsu, Chia-Hung | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:24:43Z | |
| dc.date.available | 2014-12-08T15:24:43Z | |
| dc.date.issued | 2006 | en_US |
| dc.description.abstract | ZnO-SiO2 nanocomposite thin films were prepared using RF sputtering method without substrate heating. The photoluminance (PL) measurements showed that the ZnO-SiO2 nanocomposite thin films are able to emit white light consisting of violet, blue, and green-yellow band emissions. The blue emission was attributed to the large amount of ZnO/SiO2 interfaces, which enlarges the depletion layer width and then enhances the related transition. Further analyses indicated that the defect structure of samples could be manipulated by the amount and distribution of ZnO nanoparticles in SiO2 matrix to yield distinct luminescence property. | en_US |
| dc.identifier.isbn | 1-55899-845-4 | en_US |
| dc.identifier.issn | 0272-9172 | en_US |
| dc.identifier.journal | Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applications | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17161 | |
| dc.identifier.wosnumber | WOS:000239521000082 | |
| dc.language.iso | en_US | en_US |
| dc.title | White-light emitting ZnO-SiO2 nanocomposite thin films prepared by sputtering method | en_US |
| dc.type | Proceedings Paper | en_US |
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