A 5-GHz, 30-dBm, 0.9-dB insertion loss single-pole double-throw T/R switch in 90nm CMOS

dc.citation.epage	+	en_US
dc.citation.spage	283	en_US
dc.citation.woscount	0	en_US
dc.contributor.author	Fu, Chang-Tsung	en_US
dc.contributor.author	Taylor, Stewart S.	en_US
dc.contributor.author	Ku, Chien-Nan	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.date.accessioned	2017-04-21T06:48:54Z
dc.date.available	2017-04-21T06:48:54Z
dc.date.issued	2008	en_US
dc.description.abstract	A 5GHz, 30-dBm CMOS T/R switch implemented in 90nm CMOS is reported. A body isolation technique is employed and optimized for power handling capability. Inductors are employed with the transistor switches for parallel resonance to improve isolation. Thick oxide NMOS transistors are used for the switching transistors and placed inside the inductors to reduce the active chip area to approximately 0.2mm(2). 0.9-dB insertion loss for both TX and RX modes is achieved with a 5-V control voltage.	en_US
dc.identifier.isbn	978-1-4244-1808-4	en_US
dc.identifier.issn	1529-2517	en_US
dc.identifier.journal	2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/135641
dc.identifier.wosnumber	WOS:000258748700071	en_US
dc.language.iso	en_US	en_US
dc.subject	RF switch	en_US
dc.subject	T/R switch	en_US
dc.subject	wireless LAN	en_US
dc.subject	time division multiplexing	en_US
dc.title	A 5-GHz, 30-dBm, 0.9-dB insertion loss single-pole double-throw T/R switch in 90nm CMOS	en_US
dc.type	Proceedings Paper	en_US

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