Method for forming a GexSi1-x buffer layer of solar-energy battery on a silicon wafer
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20100129956 | zh_TW |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.author | Tang, Shih-Hsuan | en_US |
| dc.contributor.author | Lin, Yue-Cin | en_US |
| dc.date.accessioned | 2014-12-16T06:15:35Z | |
| dc.date.available | 2014-12-16T06:15:35Z | |
| dc.date.issued | 2010-05-27 | en_US |
| dc.description.abstract | The method is disclosed that Si+ is implanted on Si substrate to enhance strain relaxation at the interface between the metamorphic GexSi1−x buffer layers and Si substrate, in order to facilitate the growth of a high quality Ge on Si substrate. And several GexSi1−x buffer layers (Si/Ge0.8Si0.2/Ge0.9Si0.1/Ge) are grown on top of Si substrate by UHVCVD. Then grow pure Ge layer of low dislocation density on GexSi1−x buffer layer. Finally, grow up high efficiency III-V solar cell on GexSi1−x buffer layer. | zh_TW |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105406 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Method for forming a GexSi1-x buffer layer of solar-energy battery on a silicon wafer | zh_TW |
| dc.type | Patents | en_US |