ON THE FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF P+-N-N+(N+-P-P+) EPITAXIAL DIODES

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dc.citation.epage647en_US
dc.citation.issue6en_US
dc.citation.spage641en_US
dc.citation.volume23en_US
dc.citation.woscount12
dc.contributor.authorWU, CYen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.contributor.departmentNano Facility Centeren_US
dc.date.accessioned2014-12-08T15:06:30Z
dc.date.available2014-12-08T15:06:30Z
dc.date.issued1980en_US
dc.identifier.issn0038-1101en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5072
dc.identifier.wosnumberWOS:A1980JZ72300017
dc.language.isoen_USen_US
dc.titleON THE FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF P+-N-N+(N+-P-P+) EPITAXIAL DIODESen_US
dc.typeArticleen_US

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