Investigation of beryllium implanted P-type GaN
| dc.citation.epage | 84 | en_US |
| dc.citation.issue | 1-3 | en_US |
| dc.citation.spage | 82 | en_US |
| dc.citation.volume | 82 | en_US |
| dc.contributor.author | Yu, CC | en_US |
| dc.contributor.author | Chu, CF | en_US |
| dc.contributor.author | Tsai, JY | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:43:50Z | |
| dc.date.available | 2014-12-08T15:43:50Z | |
| dc.date.issued | 2001-05-22 | en_US |
| dc.description.abstract | We report the preliminary results of beryllium implanted into P-type GaN and the effects on the characteristic of Mg-doped P-GaN. These samples were implanted with Be ions were implanted with two different energies of 50 and 150 keV at two different doses of similar to 10(13) and 10(14) cm(-2) at room temperature. Surface morphology and photoluminescence measurements are presented. (C) 2001 Elsevier Science B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S0921-5107(00)00751-0 | en_US |
| dc.identifier.issn | 0921-5107 | en_US |
| dc.identifier.journal | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0921-5107(00)00751-0 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29640 | |
| dc.identifier.wosnumber | WOS:000168618700024 | |
| dc.language.iso | en_US | en_US |
| dc.subject | beryllium | en_US |
| dc.subject | implant | en_US |
| dc.subject | GaN | en_US |
| dc.subject | photoluminescence | en_US |
| dc.title | Investigation of beryllium implanted P-type GaN | en_US |
| dc.type | Article; Proceedings Paper | en_US |