METHOD FOR GROWING EPITAXIAL DIAMOND
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20140137795 | zh_TW |
| dc.contributor.author | CHANG Li | en_US |
| dc.contributor.author | WU Ping-Hsun | en_US |
| dc.contributor.author | CHIU Kun-An | en_US |
| dc.date.accessioned | 2014-12-16T06:14:48Z | |
| dc.date.available | 2014-12-16T06:14:48Z | |
| dc.date.issued | 2014-05-22 | en_US |
| dc.description.abstract | A method for growing epitaxial diamond is provided here. A metallic layer is deposited on a diamond substrate and is followed by an epitaxial diamond film deposited on top of the metallic layer. As a buffer layer, the metallic layer relieves stress accumulated in the thin film of the epitaxial diamond to prevent cracks. In consequence, diamond epitaxial layers with desired thickness and good quality can be obtained. | zh_TW |
| dc.identifier.govdoc | C30B025/18 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104918 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | METHOD FOR GROWING EPITAXIAL DIAMOND | zh_TW |
| dc.type | Patents | en_US |