矽鍺應力層及非應力層的探討及高速電晶體之應用
| dc.contributor.author | 荊鳳德 | en_US |
| dc.contributor.author | CHIN ALBERT | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:46:17Z | |
| dc.date.available | 2014-12-13T10:46:17Z | |
| dc.date.issued | 2000 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC89-2215-E009-044 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=720340&docId=135308 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/100716 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 矽鍺應力層及非應力層的探討及高速電晶體之應用 | zh_TW |
| dc.title | Investigation of Strained and Unstrained SiGe Layer and Its Application to High Speed MOSFET | en_US |
| dc.type | Plan | en_US |