A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs
| dc.citation.epage | 144 | en_US |
| dc.citation.spage | 143 | en_US |
| dc.contributor.author | Chen, William P. N. | en_US |
| dc.contributor.author | Su, P. | en_US |
| dc.contributor.author | Wang, J. S. | en_US |
| dc.contributor.author | Lien, C. H. | en_US |
| dc.contributor.author | Chang, C. H. | en_US |
| dc.contributor.author | Goto, K. | en_US |
| dc.contributor.author | Diaz, C. H. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:24:57Z | |
| dc.date.available | 2014-12-08T15:24:57Z | |
| dc.date.issued | 2006 | en_US |
| dc.identifier.isbn | 1-4244-0181-X | en_US |
| dc.identifier.journal | 2006 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Proceedings of Technical Papers | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17322 | |
| dc.identifier.wosnumber | WOS:000239791300057 | |
| dc.language.iso | en_US | en_US |
| dc.title | A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs | en_US |
| dc.type | Proceedings Paper | en_US |
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