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Photoluminescent Study of High Indium Content Nanopyramid Light Emitting Diodes

dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorChang, Jet-Rungen_US
dc.contributor.authorSou, Kuok-Panen_US
dc.contributor.authorLi, Yun-Jingen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:35:41Z
dc.date.available2014-12-08T15:35:41Z
dc.date.issued2013en_US
dc.description.abstractThe radiative and non-radiative lifetime of high In content nanopyramid GaN LEDs are investigated by time resolved and temperature dependent photoluminescent measurement. The radiative recombination efficiency is much improved compared with the conventional c-plane LED.en_US
dc.identifier.isbn978-1-4673-6476-8en_US
dc.identifier.journal2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/24095
dc.identifier.wosnumberWOS:000334176100308
dc.language.isoen_USen_US
dc.titlePhotoluminescent Study of High Indium Content Nanopyramid Light Emitting Diodesen_US
dc.typeProceedings Paperen_US

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