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具紫外光吸收層之薄膜電晶體

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201448251zh_TW
dc.contributor.author謝漢萍en_US
dc.contributor.author劉柏村en_US
dc.contributor.author蔡韻竹en_US
dc.contributor.author蔡旻諺en_US
dc.contributor.author鄧立峯en_US
dc.date.accessioned2015-05-12T02:59:35Z
dc.date.available2015-05-12T02:59:35Z
dc.date.issued2014-12-16en_US
dc.description.abstract一種薄膜電晶體,其包括透明基板、閘極設置於透明基板上、閘極絕緣層設置於閘極及透明基板上、半導體主動層設置於閘絕緣層上、電極層與半導體層藉由電力接觸且曝露出部份的半導體主動層以及紫外光吸收層設置於半導體主動層上,藉由紫外光吸收層在可見光的範圍之光穿透率及其具備保護元件不受外界水氣氧化而影響光電特性之優點,並且藉由薄膜沉積的過程中調整參數來改變其導電度,可降低照光後元件轉移特性曲線變動的光敏感度,並且可穩定啟始電壓使其在一定的範圍內進行操作。zh_TW
dc.identifier.govdocH01L031/10zh_TW
dc.identifier.govdocH01L029/78zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/122800
dc.language.isozh_TWen_US
dc.title具紫外光吸收層之薄膜電晶體zh_TW
dc.typePatentsen_US

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