Embedded InN Dot-Like Structures with Modulating Growth Temperature in Nitride-Based Solar Cell

Abstract

The embedded InN dot-like structures within nitride-based solar cells is promising for extended visible and infrared absorption of solar spectrum. The temperature dependent InN epitaxial growth was demonstrated in a low-pressure metal organic chemical vapor deposition (MOCVD) system and the absorption coefficient of fabricated InN-dots was measured and integrated into APSYS (R) simulation platform. The dimension-quantization effect of the InN dot-like layer was investigated via photoluminescence (PL) measurements. Higher growth temperature region induces multiple PL peaks and blue-shift phenomenon, which could be attributed to variations in size and composition. The extracted absorption coefficients of InN-dot-like layer can be used to calculate the conversion efficiency of 2.34% for the corresponding GaN-based solar cell design.