METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20140287561 | zh_TW |
| dc.contributor.author | LIU Po-Tsun | en_US |
| dc.contributor.author | TENG Li-Feng | en_US |
| dc.contributor.author | LO Yuan-Jou | en_US |
| dc.contributor.author | LEE Yao-Jen | en_US |
| dc.date.accessioned | 2014-12-16T06:14:44Z | |
| dc.date.available | 2014-12-16T06:14:44Z | |
| dc.date.issued | 2014-09-25 | en_US |
| dc.description.abstract | A method for fabricating a semiconductor device is disclosed in the present invention. The abovementioned method comprises the following steps. Firstly, a gate is formed on a substrate. A gate insulating layer is then formed on the gate, and further an active layer is disposed on the gate insulating layer, wherein the active layer is composed of a microwave absorbing material. Source/drain is defined on the active layer to form the semiconductor device, and a microwave annealing process is finally performed thereon. | zh_TW |
| dc.identifier.govdoc | H01L021/477 | zh_TW |
| dc.identifier.govdoc | H01L029/66 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104867 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE | zh_TW |
| dc.type | Patents | en_US |