金屬閘極金氧半場效電晶體關鍵技術(III)
| dc.contributor.author | 崔秉鉞 | en_US |
| dc.contributor.author | Bing-YueTsui | en_US |
| dc.contributor.department | 國立交通大學電子工程學系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:33:36Z | |
| dc.date.available | 2014-12-13T10:33:36Z | |
| dc.date.issued | 2003 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC92-2215-E009-001 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=873399&docId=167315 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/92160 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 金屬閘極金氧半場效電晶體關鍵技術(III) | zh_TW |
| dc.title | Key Technologies of Metal Gate MOSFET (III) | en_US |
| dc.type | Plan | en_US |