A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)
| dc.citation.epage | 131 | en_US |
| dc.citation.spage | 128 | en_US |
| dc.contributor.author | Kuo, Chien-I | en_US |
| dc.contributor.author | Hsu, Heng-Tung | en_US |
| dc.contributor.author | Wu, Chien-Ying | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.author | Miyamoto, Yasuyuki | en_US |
| dc.contributor.author | Chen, Yu-Lin | en_US |
| dc.contributor.author | Biswas, Dhrubes | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:25:10Z | |
| dc.date.available | 2014-12-08T15:25:10Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.abstract | A 40-nm T-gate high-electron-mobility-transistor with InAs/In(0.7)Ga(0.3)As composite-channel has been fabricated. The device exhibits a transconductance (g.) of 2200 mS/mm, a cutoff frequency f(T) of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or sub-millimeter-wave applications. | en_US |
| dc.identifier.doi | 10.1109/ICIPRM.2009.5012458 | en_US |
| dc.identifier.isbn | 978-1-4244-3432-9 | en_US |
| dc.identifier.issn | 1092-8669 | en_US |
| dc.identifier.journal | 2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/ICIPRM.2009.5012458 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17560 | |
| dc.identifier.wosnumber | WOS:000270539400034 | |
| dc.language.iso | en_US | en_US |
| dc.subject | InAs-channel | en_US |
| dc.subject | HEMTs | en_US |
| dc.subject | sub-millimeter-wave | en_US |
| dc.title | A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T) | en_US |
| dc.type | Proceedings Paper | en_US |