Self-Protected LDMOS Output Device with Embedded SCR to Improve ESD Robustness in 0.25-mu m 60-V BCD Process

Abstract

For high-voltage output driver, the lateral DMOS (LDMOS) is often used for both output function operation and self-protection against electrostatic discharge (ESD) events. In this work, a new structure of LDMOS output device with embedded SCR has been proposed and verified in a 0.25-mu m 60-V BCD process. This new structure, with additional p(+) and n(+) implantation regions added between the drain contact and poly-gate of LDMOS, can keep it stably in the high-current holding region after snapback. By using this structure, the LDMOS can provide high enough self-protected ESD robustness for applications in the high-voltage output drivers.