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新穎反向式微影技術應用於CMOS 32奈米節點及其以下之光學鄰近修正術(OPC)與可製造性設計(DFM)

dc.contributor.author余沛慈en_US
dc.contributor.authorYu Peichenen_US
dc.contributor.department國立交通大學光電工程學系(所)zh_TW
dc.date.accessioned2014-12-13T10:49:40Z
dc.date.available2014-12-13T10:49:40Z
dc.date.issued2009en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC98-2221-E009-111-MY2zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=1903573&docId=315423en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/101732
dc.language.isozh_TWen_US
dc.title新穎反向式微影技術應用於CMOS 32奈米節點及其以下之光學鄰近修正術(OPC)與可製造性設計(DFM)zh_TW
dc.titleInverse Lithography Solution for Optical Proximity Correction and Design for Manufacturing for CMOS 32nm Node and beyonden_US
dc.typePlanen_US

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