Light Emitting Diode Device

Abstract

A light emitting diode device comprises the transparent conductive layer is formed on the conductive substrate, the p-type semiconductor layer is formed on the transparent conductive layer, the active layer is formed on the p-type semiconductor layer, and the n-type semiconductor layer is formed on the active layer, the buffer layer is formed on the n-type semiconductor layer, and a metal electrode is formed on a rough and uneven surface of the buffer layer, in which the electrical property of the n-type semiconductor layer is opposites to that of the p-type semiconductor layer. The reflective effect within the light emitting diode device can be increased. In addition, by reducing the thickness of the undoped GaN layer, the absorption of ultraviolet light inside the components of the light emitting diode device can be reduced.