以液相沉積成長二氧化鉿薄膜之方法

Abstract

本發明關於利用液相沉積法以成長具有高介電常數之絕緣膜，特別是二氫化鉿絕緣層之方法，包括： (a)將二氧化鉿(HfO2)粉末加入氫氟酸(HF)溶液中，形成氫氟鉿酸鹽(HxHfyFz)溶液，並於低溫下加以攪拌溶解，使成為飽和溶液； (b)加入去離子水於該飽和溶液中，使其成為過飽和溶液； (c)將矽基板置入該過飽和溶液中，由於化學逆反應，可沉積高介電常數二氧化鉿(HfO2)薄膜於該矽基板上。 This invention relating to process using liquid phase deposition to form film of high dielectric material, particularly hafnium dioxide, which comprisses： (1) applying powdered hafnium dioxide into solution of hydrogen fluoride for preparing solution of HxHfyFz salts, and stirring the solution at low temperature to dissolve the salts to a saturated state; (2) adding de-ion water into said saturated solution and making it be a super-saturated state; (3) applying a silicon substrate into the super-saturated solution and depositing high dielectric hafnium dioxide on the surface of the substrate due to reversed chemical reaction in said solution.