Impact of thermal effects on simulation accuracy of nonlinear dynamics in semiconductor lasers
| dc.citation.epage | 1235 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 1228 | en_US |
| dc.citation.volume | 11 | en_US |
| dc.contributor.author | Lim, CG | en_US |
| dc.contributor.author | Iezekiel, S | en_US |
| dc.contributor.author | Snowden, CM | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:18:36Z | |
| dc.date.available | 2014-12-08T15:18:36Z | |
| dc.date.issued | 2005-09-01 | en_US |
| dc.description.abstract | Simulations based on a carrier heating model are performed to investigate the behavior of a directly modulated 1.55-mu m InGaAsP distributed feedback (DFB) laser diode (LD). Results show that bandgap shrinkage has a significant effect on the simulated nonlinear behavior of LDs. However, the varying nature of lattice temperature and excess carrier energy relaxation is important to produce simulated results that agree with measured results. | en_US |
| dc.identifier.doi | 10.1109/JSTQE.2005.853748 | en_US |
| dc.identifier.issn | 1077-260X | en_US |
| dc.identifier.journal | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/JSTQE.2005.853748 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13386 | |
| dc.identifier.wosnumber | WOS:000234639100045 | |
| dc.language.iso | en_US | en_US |
| dc.subject | chaos | en_US |
| dc.subject | laser stability | en_US |
| dc.subject | nonlinear optics | en_US |
| dc.subject | semiconductor lasers | en_US |
| dc.title | Impact of thermal effects on simulation accuracy of nonlinear dynamics in semiconductor lasers | en_US |
| dc.type | Article; Proceedings Paper | en_US |