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High-Performance In0.53Ga0.47As FinFETs for logic and RF Applications

dc.citation.epage0en_US
dc.citation.spage0en_US
dc.citation.woscount0en_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorLuc, Ho Quangen_US
dc.contributor.authorLin, Chin Yuehen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.date.accessioned2020-10-05T02:00:28Z
dc.date.available2020-10-05T02:00:28Z
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-0080-7en_US
dc.identifier.journal2019 COMPOUND SEMICONDUCTOR WEEK (CSW)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/155004
dc.identifier.wosnumberWOS:000539485600096en_US
dc.language.isoen_USen_US
dc.titleHigh-Performance In0.53Ga0.47As FinFETs for logic and RF Applicationsen_US
dc.typeProceedings Paperen_US

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