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靜態記憶體及記憶胞

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201442028zh_TW
dc.contributor.author周世傑en_US
dc.contributor.author杜明賢en_US
dc.contributor.author胡育豪en_US
dc.contributor.author莊景德en_US
dc.contributor.author邱奕瑋en_US
dc.date.accessioned2014-12-16T06:17:34Z
dc.date.available2014-12-16T06:17:34Z
dc.date.issued2014-11-01en_US
dc.description.abstract本發明提出靜態記憶體及記憶胞,靜態記憶胞包括第一至第六電晶體、第一至第三開關、第一及第二下拉開關。在進行資料寫入時,透過截止第二或第五電晶體來切斷由第一至第六電晶體所構成的閂鎖電路的閂鎖能力,以加快資料寫入的速度及加強寫入能力。第一及第二開關提供資料讀出或寫入的路徑,而第三開關則耦接至位元線以接收位元上的資料或傳送資料至位元線。zh_TW
dc.identifier.govdocG11C011/41zh_TW
dc.identifier.govdocH01L021/8244zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/106489
dc.language.isozh_TWen_US
dc.title靜態記憶體及記憶胞zh_TW
dc.typePatentsen_US

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