Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure
| dc.citation.epage | 1560 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 1555 | en_US |
| dc.citation.volume | 1 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Chen, C. W. | en_US |
| dc.contributor.author | Hung, S. C. | en_US |
| dc.contributor.author | Lee, C. H. | en_US |
| dc.contributor.author | Tun, C. J. | en_US |
| dc.contributor.author | Kuo, C. H. | en_US |
| dc.contributor.author | Yang, M. D. | en_US |
| dc.contributor.author | Yeh, C. W. | en_US |
| dc.contributor.author | Wu, C. H. | en_US |
| dc.contributor.author | Chi, G. C. | en_US |
| dc.contributor.department | 照明與能源光電研究所 | zh_TW |
| dc.contributor.department | Institute of Lighting and Energy Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:21:11Z | |
| dc.date.available | 2014-12-08T15:21:11Z | |
| dc.date.issued | 2011-12-01 | en_US |
| dc.description.abstract | Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO(2)(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (V(f)) of 6V with a series resistance of 2.2 x 10(5) Omega. (C) 2011 Optical Society of America | en_US |
| dc.identifier.issn | 2159-3930 | en_US |
| dc.identifier.journal | OPTICAL MATERIALS EXPRESS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15038 | |
| dc.identifier.wosnumber | WOS:000299050200020 | |
| dc.language.iso | en_US | en_US |
| dc.title | Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure | en_US |
| dc.type | Article | en_US |