High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications
| dc.citation.epage | 49 | en_US |
| dc.citation.spage | 48 | en_US |
| dc.contributor.author | Yang, Shao-Ming | en_US |
| dc.contributor.author | Huang, Jiun-Jia | en_US |
| dc.contributor.author | Chien, Chao-Hsin | en_US |
| dc.contributor.author | Taeng, Pei-Jer | en_US |
| dc.contributor.author | Lee, Lurng-Shehng | en_US |
| dc.contributor.author | Tsai, Ming-Jinn | en_US |
| dc.contributor.author | Lei, Tan-Fu | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:54Z | |
| dc.date.available | 2014-12-08T15:04:54Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.abstract | This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device. | en_US |
| dc.identifier.doi | 10.1109/VTSA.2008.4530792 | en_US |
| dc.identifier.isbn | 978-1-4244-1614-1 | en_US |
| dc.identifier.journal | 2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/VTSA.2008.4530792 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3419 | |
| dc.identifier.wosnumber | WOS:000256564900021 | |
| dc.language.iso | en_US | en_US |
| dc.title | High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications | en_US |
| dc.type | Proceedings Paper | en_US |