Scanning tunneling microscopy observation of surface reconstruction of Si(100) during chemical vapor deposition from Si2H6
| dc.citation.epage | 835 | en_US |
| dc.citation.issue | 1-3 | en_US |
| dc.citation.spage | 831 | en_US |
| dc.citation.volume | 402 | en_US |
| dc.contributor.author | Lin, DS | en_US |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | Institute of Physics | en_US |
| dc.date.accessioned | 2014-12-08T15:49:05Z | |
| dc.date.available | 2014-12-08T15:49:05Z | |
| dc.date.issued | 1998-05-15 | en_US |
| dc.description.abstract | This study employs real-time high-temperature scanning tunneling microscopy to examine the evolution of the surface atomic structure of Si(100) during homoepitaxy by chemical vapor deposition at 625 degrees C. At the initial stage, a (2 x n) structure is gradually formed, and the growth mode is pure step flow, followed by double step flow after a single-domain surface is obtained due to faster step advance of S-B than S-A. As growth proceeds, areas with c(4 x 4) symmetry appear, grow, and eventually cover the entire surface. (C) 1998 Elsevier Science B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S0039-6028(97)00894-7 | en_US |
| dc.identifier.issn | 0039-6028 | en_US |
| dc.identifier.journal | SURFACE SCIENCE | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0039-6028(97)00894-7 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32617 | |
| dc.identifier.wosnumber | WOS:000074610800173 | |
| dc.language.iso | en_US | en_US |
| dc.subject | chemical vapor deposition | en_US |
| dc.subject | disilane | en_US |
| dc.subject | scanning tunneling microscopy | en_US |
| dc.subject | silicon | en_US |
| dc.title | Scanning tunneling microscopy observation of surface reconstruction of Si(100) during chemical vapor deposition from Si2H6 | en_US |
| dc.type | Article; Proceedings Paper | en_US |