Electrical and reliability characteristics of 1nm ultrathin oxynitride gate dielectric prepared by RTP
| dc.citation.epage | 352 | en_US |
| dc.citation.spage | 349 | en_US |
| dc.contributor.author | Yang, WC | en_US |
| dc.contributor.author | Chen, CF | en_US |
| dc.contributor.author | Chang, KM | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:26:17Z | |
| dc.date.available | 2014-12-08T15:26:17Z | |
| dc.date.issued | 2003 | en_US |
| dc.description.abstract | Ultra low leakage and highly reliable 1 nm gate oxynitride films were successfully developed. Ultrathin oxynitride films were prepared by RTP in N-2/O-2 = 5/1 (slm) optimum mixed gas ambient These films show excellent interface properties, significantly low gate leakage current, and superior enhanced reliability. Moreover, interface trap generation under higher field stressing was also investigated. | en_US |
| dc.identifier.isbn | 0-7803-7749-4 | en_US |
| dc.identifier.journal | 2003 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18671 | |
| dc.identifier.wosnumber | WOS:000189450800077 | |
| dc.language.iso | en_US | en_US |
| dc.title | Electrical and reliability characteristics of 1nm ultrathin oxynitride gate dielectric prepared by RTP | en_US |
| dc.type | Proceedings Paper | en_US |
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