下世代單一電晶體動態隨機存取記憶體
| dc.contributor.author | 荊鳳德 | en_US |
| dc.contributor.author | CHIN ALBERT | en_US |
| dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:29:04Z | |
| dc.date.available | 2014-12-13T10:29:04Z | |
| dc.date.issued | 2014 | en_US |
| dc.description.sponsorship | 科技部 | zh_TW |
| dc.identifier.govdoc | MOST103-2221-E009-178-MY3 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=8349447&docId=444796 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/88848 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 下世代單一電晶體動態隨機存取記憶體 | zh_TW |
| dc.title | Next Generation One-Transistor DRAM | en_US |
| dc.type | Plan | en_US |
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