Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation

dc.citation.epage	258	en_US
dc.citation.spage	255	en_US
dc.citation.woscount	0	en_US
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Chang, TH	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.date.accessioned	2019-04-02T06:04:42Z
dc.date.available	2019-04-02T06:04:42Z
dc.date.issued	2003-01-01	en_US
dc.description.abstract	In this paper, we found the nitridation on the interpoly-oxide with NH3 and N2O processes can simultaneously improve the quality of both tunneling oxide and interpoly-oxide. Three types of poly-Si for floating gate are investigated. We found in-situ doped poly -Si shows the best performance in terms of breakdown filed, charge to breakdown (Q(BD)) and trapping rate The Q(BD) of interpoly-oxide can be reached as high as 35 C/cm(2). This scheme is very promising for nonvolatile memory devices.	en_US
dc.identifier.journal	2003 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/150625
dc.identifier.wosnumber	WOS:000189391000066	en_US
dc.language.iso	en_US	en_US
dc.title	Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation	en_US
dc.type	Proceedings Paper	en_US

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