外加應力影響下單層二硫化鉬之多體及自旋性質：偽藍道能級之理論研究
| dc.contributor.author | 鄭舜仁 | zh_TW |
| dc.contributor.author | Cheng Shun-Jen | en_US |
| dc.contributor.department | 國立交通大學電子物理學系（所） | zh_TW |
| dc.date.accessioned | 2016-03-28T08:17:19Z | |
| dc.date.available | 2016-03-28T08:17:19Z | |
| dc.date.issued | 2015 | en_US |
| dc.description.sponsorship | 科技部 | zh_TW |
| dc.identifier.govdoc | MOST104-2112-M009-002-MY2 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=11575711&docId=469859 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/129868 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 外加應力影響下單層二硫化鉬之多體及自旋性質：偽藍道能級之理論研究 | zh_TW |
| dc.title | Theoretical Studies of Fractionally Filled Pseudo-Landau Levels in Strained Mos2 Monolayers | en_US |
| dc.type | Plan | en_US |
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