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靜態隨機存取記憶體

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201411637zh_TW
dc.contributor.author莊景德en_US
dc.contributor.author楊皓義en_US
dc.contributor.author盧建宇en_US
dc.contributor.author陳建亨en_US
dc.contributor.author張琦昕en_US
dc.contributor.author黃柏蒼en_US
dc.contributor.author賴淑琳en_US
dc.contributor.author黃威en_US
dc.contributor.author周世傑en_US
dc.contributor.author杜明賢en_US
dc.date.accessioned2014-12-16T06:17:46Z
dc.date.available2014-12-16T06:17:46Z
dc.date.issued2014-03-16en_US
dc.description.abstract本發明揭露一種靜態隨機存取記憶體,其包含一預充裝置、一第一單元行陣列/周邊電路、及一第一漣波緩衝裝置。該預充裝置連接至一第一區域位元線,以對該第一區域位元線進行預充。該第一單元行陣列/周邊電路連接至該第一區域位元線,該第一單元行陣列/周邊電路具有多個單元以暫存資料,該多個單元連接至該第一區域位元線。該第一漣波緩衝裝置連接至該第一區域位元線及一第二區域位元線,該第一漣波緩衝裝置將該第一區域位元線的資料傳遞之該第二區域位元線。zh_TW
dc.identifier.govdocG11C007/12zh_TW
dc.identifier.govdocG11C011/413zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/106580
dc.language.isozh_TWen_US
dc.title靜態隨機存取記憶體zh_TW
dc.typePatentsen_US

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