High Performance Normally-Off AlGaN/GaN MIS-HEMT Using Charge Storage Technique
| dc.citation.epage | 0 | en_US |
| dc.citation.spage | 0 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Han, Ping-Cheng | en_US |
| dc.contributor.author | Yang, Chih-Yi | en_US |
| dc.contributor.author | Lee, Ming-Wen | en_US |
| dc.contributor.author | Wu, Jui-Sheng | en_US |
| dc.contributor.author | Wu, Chia-Hsun | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 國際半導體學院 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | International College of Semiconductor Technology | en_US |
| dc.date.accessioned | 2020-10-05T02:00:29Z | |
| dc.date.available | 2020-10-05T02:00:29Z | |
| dc.date.issued | 2019-01-01 | en_US |
| dc.identifier.isbn | 978-1-7281-0080-7 | en_US |
| dc.identifier.journal | 2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/155007 | |
| dc.identifier.wosnumber | WOS:000539485600312 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | High Performance Normally-Off AlGaN/GaN MIS-HEMT Using Charge Storage Technique | en_US |
| dc.type | Proceedings Paper | en_US |
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