Fabrication and characterization of gated Si field emitter arrays with gate aperture below 0.5 mu m

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A1995BE29Y00016.pdf (407.07 KB)

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Authors

DOI

10.1117/12.220935

Keywords

oxidation sharpening , microtips , gated field emitter arrays , silicon pedestal , gate aperture , field emission

URI

http://dx.doi.org/10.1117/12.220935
https://ir.lib.nycu.edu.tw/handle/11536/19968

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會議論文;;Conferences Paper