Dynamic stress effects on the reliability of poly-Si TFT
| dc.citation.epage | 499 | en_US |
| dc.citation.spage | 497 | en_US |
| dc.contributor.author | Kuo, Yan-Fu | en_US |
| dc.contributor.author | Huang, Shih-Che | en_US |
| dc.contributor.author | Shih, Wei-Lun | en_US |
| dc.contributor.author | Tai, Ya-Hsiang | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:11:58Z | |
| dc.date.available | 2014-12-08T15:11:58Z | |
| dc.date.issued | 2007 | en_US |
| dc.description.abstract | The degradation of poly-Si TFT under different gate pulse waveforms is investigated. The mobility degradation is analyzed with the lateral transient electric field and carrier numbers near the channel edges. A proposed index fairly depicts the device degradation, which is helpful in evaluating lifetime for the poly-Si TFT circuits. | en_US |
| dc.identifier.isbn | 978-957-28522-4-8 | en_US |
| dc.identifier.journal | IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9190 | |
| dc.identifier.wosnumber | WOS:000258177700127 | |
| dc.language.iso | en_US | en_US |
| dc.title | Dynamic stress effects on the reliability of poly-Si TFT | en_US |
| dc.type | Proceedings Paper | en_US |
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