Near Infrared Silicon Quantum Dots MOSFET Detector
| dc.citation.spage | 130 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Shieh, Jia-Min | en_US |
| dc.contributor.author | Yu, Wen-Chien | en_US |
| dc.contributor.author | Wang, Chao-Kei | en_US |
| dc.contributor.author | Dai, Bau-Tong | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Huang, Jung Y. | en_US |
| dc.contributor.author | Pan, C-Ling | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2019-04-02T06:04:47Z | |
| dc.date.available | 2019-04-02T06:04:47Z | |
| dc.date.issued | 2009-01-01 | en_US |
| dc.description.abstract | Fully Si-based MOSFET photodetector was demonstrated at optical telecommunication wavelengths by using a gate dielectric stack comprising of a Si quantum dots film. Illumination at wavelengths lambda=1.55 mu m, photoresponse as high as 2.0A/W was measured. (C) 2009 Optical Society of America | en_US |
| dc.identifier.journal | 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/151178 | |
| dc.identifier.wosnumber | WOS:000274751300066 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Near Infrared Silicon Quantum Dots MOSFET Detector | en_US |
| dc.type | Proceedings Paper | en_US |
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