Ge/Al bilayer thin film for optical write-once media
| dc.citation.epage | 0 | en_US |
| dc.citation.spage | 0 | en_US |
| dc.citation.volume | 6620 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Wu, T. H. | en_US |
| dc.contributor.author | Kuo, P. C. | en_US |
| dc.contributor.author | Chen, Jung-Po | en_US |
| dc.contributor.author | Wu, Chih-Yuan | en_US |
| dc.contributor.author | Yen, Po-Fu | en_US |
| dc.contributor.author | Jeng, Tzuan-Ren | en_US |
| dc.contributor.author | Huang, Der-Ray | en_US |
| dc.contributor.author | Ou, Sin-Liang | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2019-04-03T06:47:08Z | |
| dc.date.available | 2019-04-03T06:47:08Z | |
| dc.date.issued | 2007-01-01 | en_US |
| dc.description.abstract | Ge/Al bilayer thin films are prepared by magnetron sputtering. Thermal analysis shows that the phase change of the film occurs at 275 degrees C. Contrasts at 650 rim and 405 nm wavelength are 71.4% and 31.1% respectively. | en_US |
| dc.identifier.doi | 10.1117/12.738895 | en_US |
| dc.identifier.isbn | 978-0-8194-6762-1 | en_US |
| dc.identifier.issn | 0277-786X | en_US |
| dc.identifier.journal | OPTICAL DATA STORAGE 2007 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1117/12.738895 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/146555 | |
| dc.identifier.wosnumber | WOS:000250199900050 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Ge/Al bilayer thin film for optical write-once media | en_US |
| dc.type | Proceedings Paper | en_US |