Silicon controlled rectifier for the electrostatic discharge protection
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20050270710 | zh_TW |
| dc.contributor.author | Ker, Ming-Dou | en_US |
| dc.contributor.author | Lin, Kun-Hsien | en_US |
| dc.date.accessioned | 2014-12-16T06:16:14Z | |
| dc.date.available | 2014-12-16T06:16:14Z | |
| dc.date.issued | 2005-12-08 | en_US |
| dc.description.abstract | The present invention relates to an SCR (Silicon Controlled Rectifier) for the ESD (electrostatic discharge) protection comprising two terminal electrodes of a first electrode and a second electrode, a PMOS, an NMOS and an SCR structure. By utilizing an embedded SCR, a whole-chip ESD protection circuit design can be obtained. The present invention is suitable for IC products, and for applications by IC design industries and IC foundry industries. | zh_TW |
| dc.identifier.govdoc | H02H009/00 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105719 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Silicon controlled rectifier for the electrostatic discharge protection | zh_TW |
| dc.type | Patents | en_US |