A watt-level 2.3-GHz GaAs MESFET power amplifier with gap-coupled microstrip-line matching topology
| dc.citation.epage | 348 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 346 | en_US |
| dc.citation.volume | 41 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Meng, CC | en_US |
| dc.contributor.author | Wang, W | en_US |
| dc.contributor.department | 電信工程研究所 | zh_TW |
| dc.contributor.department | Institute of Communications Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:38:58Z | |
| dc.date.available | 2014-12-08T15:38:58Z | |
| dc.date.issued | 2004-06-05 | en_US |
| dc.description.abstract | A one-stage hybrid power amplifier integrated with gap-coupled microstrip lines for impedance matching is demonstrated in this work. The gap-coupled microstrip line amplifier module realized here can provide IS-dB power gain, 33.5-dBm output power, and 42% power-added efficiency (PAE) at 2.3 GHZ. The demonstrated topology is suitable in monolithic 1C technology, especially in the millimeter-wave frequency because the gap-coupled microstrip lines can he easily compacted into small size. 2004 Wiley Periodicals, Inc. | en_US |
| dc.identifier.doi | 10.1002/mop.20137 | en_US |
| dc.identifier.issn | 0895-2477 | en_US |
| dc.identifier.journal | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/mop.20137 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26681 | |
| dc.identifier.wosnumber | WOS:000221016000005 | |
| dc.language.iso | en_US | en_US |
| dc.subject | MESFET | en_US |
| dc.subject | power amplifier | en_US |
| dc.subject | microstrip lines | en_US |
| dc.title | A watt-level 2.3-GHz GaAs MESFET power amplifier with gap-coupled microstrip-line matching topology | en_US |
| dc.type | Article | en_US |