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Ultraviolet Lasing Characteristics of a GaN Photonic Crystal Defect Emitter

dc.citation.epage1064en_US
dc.citation.spage1063en_US
dc.contributor.authorLai, Chun-Fengen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorWang, Te-Chungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorLee, Chao-Kueien_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:13:47Z
dc.date.available2014-12-08T15:13:47Z
dc.date.issued2007en_US
dc.description.abstractThe fabricated GaN photonic crystal defect emitter demonstrated multimode lasing with a low optical pumping threshold of pulse engergy similar to 0.15 mu J. The device exhibited high spectral purity and enhanced spontaneous emission factor, beta similar to 0.045. (C) 2006 Optical Society of Americaen_US
dc.identifier.isbn978-1-4244-3590-6en_US
dc.identifier.journal2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/10655
dc.identifier.wosnumberWOS:000268751000534
dc.language.isoen_USen_US
dc.titleUltraviolet Lasing Characteristics of a GaN Photonic Crystal Defect Emitteren_US
dc.typeProceedings Paperen_US

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