GaN HEMT with Nitrogen-Rich Tungsten Nitride Schottky Gate and Method of Forming the Same
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20110057196 | zh_TW |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.author | Lu, Chung-Yu | en_US |
| dc.date.accessioned | 2014-12-16T06:15:27Z | |
| dc.date.available | 2014-12-16T06:15:27Z | |
| dc.date.issued | 2011-03-10 | en_US |
| dc.description.abstract | A GaN HEMT with Schottky gate is disclosed. The GaN HEMT sequentially has a GaN layer, an AlGaN layer, and a Schottky gate on a substrate, and a source and a drain on two sides of the Schottky gate. The Schottky gate is made by a material of nitrogen-rich tungsten nitride, which has a nitrogen content of about 0.5 molar ratio. | zh_TW |
| dc.identifier.govdoc | H01L029/20 | zh_TW |
| dc.identifier.govdoc | H01L029/778 | zh_TW |
| dc.identifier.govdoc | H01L021/335 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105329 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | GaN HEMT with Nitrogen-Rich Tungsten Nitride Schottky Gate and Method of Forming the Same | zh_TW |
| dc.type | Patents | en_US |