METHOD FOR PARAMETER EXTRACTION OF A SEMICONDUCTOR DEVICE
| dc.citation.patentcountry | USA | en_US |
| dc.citation.patentnumber | 20170242065 | en_US |
| dc.contributor.author | Jyh-Chyurn GUO | en_US |
| dc.contributor.author | Yen-Ying LIN | en_US |
| dc.date.accessioned | 2019-04-11T05:47:35Z | |
| dc.date.available | 2019-04-11T05:47:35Z | |
| dc.date.issued | 2017-08-24 | en_US |
| dc.description.abstract | A method is provided for parameter extraction of a semiconductor device with a multi-finger gate. The method includes measuring gate-to-source and gate-to-drain capacitances and performing 3D simulation to compute fringing capacitances, thereby computing an overlap capacitance between the gate and a source/drain extension region, and computing a length of the source/drain extension region according to the overlap capacitance. | en_US |
| dc.identifier.govdoc | G01R031/26 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/151297 | |
| dc.language.iso | en_US | en_US |
| dc.title | METHOD FOR PARAMETER EXTRACTION OF A SEMICONDUCTOR DEVICE | en_US |
| dc.type | Patents | en_US |