CMOS compatible thermoelectric infrared sensors
| dc.citation.epage | 1118 | en_US |
| dc.citation.issue | 13 | en_US |
| dc.citation.spage | 1117 | en_US |
| dc.citation.volume | 36 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Shown, CS | en_US |
| dc.contributor.author | Chi, S | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:45:11Z | |
| dc.date.available | 2014-12-08T15:45:11Z | |
| dc.date.issued | 2000-06-22 | en_US |
| dc.description.abstract | A new structure for CMOS compatible thermoelectric infrared sensors is proposed. By using micro-link structures to connect several floating membranes, the largest floating membrane area yet obtained and large output voltages have been realised. The characteristics of the sensors have been measured, and are compared with those of existing devices. | en_US |
| dc.identifier.doi | 10.1049/el:20000823 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:20000823 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30455 | |
| dc.identifier.wosnumber | WOS:000087981100016 | |
| dc.language.iso | en_US | en_US |
| dc.title | CMOS compatible thermoelectric infrared sensors | en_US |
| dc.type | Article | en_US |