以低壓化學氣相沉積氧化鉭和氧化鈦薄膜在動態隨機記憶體元件技術之研究

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dc.contributor.author羅正忠en_US
dc.contributor.department國立交通大學電子工程學系zh_TW
dc.date.accessioned2014-12-13T10:39:07Z
dc.date.available2014-12-13T10:39:07Z
dc.date.issued1996en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC85-2215-E009-047zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=234532&docId=43045en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/96099
dc.language.isozh_TWen_US
dc.subject氧化鈦zh_TW
dc.subject氧化鉭zh_TW
dc.subject動態隨機記憶體zh_TW
dc.subject記憶元件zh_TW
dc.subjectTantalum penoxideen_US
dc.subjectTitanium dioxideen_US
dc.subjectDRAMen_US
dc.subjectMemory deviceen_US
dc.title以低壓化學氣相沉積氧化鉭和氧化鈦薄膜在動態隨機記憶體元件技術之研究zh_TW
dc.titleResearch on LPCVD Ta/sub 2/0/sub 5/ and TiO/sub 2/ Thin Films for Gigabit DRAM Memory Devicesen_US
dc.typePlanen_US

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