以低壓化學氣相沉積氧化鉭和氧化鈦薄膜在動態隨機記憶體元件技術之研究

Thumbnail Image

Date

1996

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

DOI

Abstract

Description

Keywords

氧化鈦, 氧化鉭, 動態隨機記憶體, 記憶元件, Tantalum penoxide, Titanium dioxide, DRAM, Memory device

Citation

URI

https://www.grb.gov.tw/search/planDetail?id=234532&docId=43045
 https://ir.lib.nycu.edu.tw/handle/11536/96099

Collections

研究計畫;;Research Plans

Endorsement

Review

Supplemented By

Referenced By