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Method of semiconductor manufacturing process

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dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08906778zh_TW
dc.contributor.authorWu YewChung Sermonen_US
dc.contributor.authorWang Bau-Mingen_US
dc.contributor.authorHsiao Feng-Chingen_US
dc.date.accessioned2014-12-16T06:13:47Z
dc.date.available2014-12-16T06:13:47Z
dc.date.issued2014-12-09en_US
dc.description.abstractThe present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.zh_TW
dc.identifier.govdocH01L021/30zh_TW
dc.identifier.govdocH01L021/46zh_TW
dc.identifier.govdocH01L021/02zh_TW
dc.identifier.govdocH01L021/18zh_TW
dc.identifier.govdocH01L033/00zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/104323
dc.language.isozh_TWen_US
dc.titleMethod of semiconductor manufacturing processzh_TW
dc.typePatentsen_US

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