SEMICONDUCTOR OPTICAL DEVICE HAVING AN AIR MEDIA LAYER AND THE METHOD FOR FORMING THE AIR MEDIA LAYER THEREOF
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20130146896 | zh_TW |
| dc.contributor.author | LU Tien-Chang | en_US |
| dc.contributor.author | Huang Huei-Min | en_US |
| dc.contributor.author | Kuo Hao-Chung | en_US |
| dc.contributor.author | Wang Shing-Chung | en_US |
| dc.date.accessioned | 2014-12-16T06:14:58Z | |
| dc.date.available | 2014-12-16T06:14:58Z | |
| dc.date.issued | 2013-06-13 | en_US |
| dc.description.abstract | A method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer. | zh_TW |
| dc.identifier.govdoc | H01L029/16 | zh_TW |
| dc.identifier.govdoc | H01L029/20 | zh_TW |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105037 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | SEMICONDUCTOR OPTICAL DEVICE HAVING AN AIR MEDIA LAYER AND THE METHOD FOR FORMING THE AIR MEDIA LAYER THEREOF | zh_TW |
| dc.type | Patents | en_US |