Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate Insulator
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Lin, Y. C. | en_US |
| dc.contributor.author | Lin, J. C. | en_US |
| dc.contributor.author | Lin, Y. | en_US |
| dc.contributor.author | Wu, C. H. | en_US |
| dc.contributor.author | Huang, Y. X. | en_US |
| dc.contributor.author | Liu, S. C. | en_US |
| dc.contributor.author | Hsu, H. T. | en_US |
| dc.contributor.author | Hsieh, T. E. | en_US |
| dc.contributor.author | Kakushima, K. | en_US |
| dc.contributor.author | Iwai, H. | en_US |
| dc.contributor.author | Chang, E. Y. | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 國際半導體學院 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | International College of Semiconductor Technology | en_US |
| dc.date.accessioned | 2017-04-21T06:49:22Z | |
| dc.date.available | 2017-04-21T06:49:22Z | |
| dc.date.issued | 2016 | en_US |
| dc.identifier.isbn | 978-1-5090-1964-9 | en_US |
| dc.identifier.journal | 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/134550 | |
| dc.identifier.wosnumber | WOS:000392285400094 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate Insulator | en_US |
| dc.type | Proceedings Paper | en_US |
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