Zinc Dopping Effects on MOS Structure
| dc.citation.epage | 72 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 67 | en_US |
| dc.citation.volume | 3 | en_US |
| dc.contributor.author | 張俊彥 | zh_TW |
| dc.contributor.author | 曹貴有 | zh_TW |
| dc.contributor.author | C.Y.Chang | en_US |
| dc.contributor.author | K.I.Tsao | en_US |
| dc.date.accessioned | 2017-10-06T06:17:42Z | |
| dc.date.available | 2017-10-06T06:17:42Z | |
| dc.date.issued | 1968-10 | en_US |
| dc.description.abstract | It has been investigated that gold dopping into bulk of silicon can be used to controlling MOS transistor characteristics. However, zinc dopping into silicon , silicon dioxide as well as silicon dioxide- silicon interface has not yet been investigated. | en_US |
| dc.identifier.journal | 交大學刊 | zh_TW |
| dc.identifier.journal | SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/137441 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | 交大學刊編輯委員會 | zh_TW |
| dc.title | Zinc Dopping Effects on MOS Structure | en_US |
| dc.type | Campus Publications | en_US |