Impact of self-heating effect on hot carrier degradation in high-voltage LDMOS
| dc.citation.epage | 884 | en_US |
| dc.citation.spage | 881 | en_US |
| dc.contributor.author | Cheng, Chih-Chang | en_US |
| dc.contributor.author | Lin, J. F. | en_US |
| dc.contributor.author | Wang, Tahui | en_US |
| dc.contributor.author | Hsieh, T. H. | en_US |
| dc.contributor.author | Tzeng, J. T. | en_US |
| dc.contributor.author | Jong, Y. C. | en_US |
| dc.contributor.author | Liou, R. S. | en_US |
| dc.contributor.author | Pan, Samuel C. | en_US |
| dc.contributor.author | Hsu, S. L. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:09:25Z | |
| dc.date.available | 2014-12-08T15:09:25Z | |
| dc.date.issued | 2007 | en_US |
| dc.description.abstract | Self-heating induced transient hot carrier effects in high-voltage n-LDMOS are investigated. A novel LDMOS structure incorporating a metal contact in the bird's beak region is fabricated, which allows us to probe an internal voltage transient in hot carrier stress. The AC stress-frequency dependence of device degradation is characterized and evaluated by a two-dimensional numerical simulation. Our result shows that drain current degradation in AC stress is more serious than in DC stress because of the reduction. of self-heating effect. | en_US |
| dc.identifier.doi | 10.1109/IEDM.2007.4419090 | en_US |
| dc.identifier.isbn | 978-1-4244-1507-6 | en_US |
| dc.identifier.journal | 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/IEDM.2007.4419090 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7190 | |
| dc.identifier.wosnumber | WOS:000259347800202 | |
| dc.language.iso | en_US | en_US |
| dc.title | Impact of self-heating effect on hot carrier degradation in high-voltage LDMOS | en_US |
| dc.type | Article | en_US |