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Synthesis of Wafer-Scale WSe2 by WOx Selenization on SiO2 / Si Substrates

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dc.citation.epage55en_US
dc.citation.spage54en_US
dc.citation.woscount0en_US
dc.contributor.authorChu, Yung-Chingen_US
dc.contributor.authorJong, Chao-Anen_US
dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorZhang, Mingen_US
dc.contributor.authorChien, Po-Yenen_US
dc.contributor.authorHsu, Hung-Ruen_US
dc.contributor.authorChen, Hung-Yien_US
dc.contributor.authorTu, Yung-Yien_US
dc.contributor.authorPande, Krishna P.en_US
dc.contributor.authorWoo, Jason C. S.en_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.date.accessioned2017-04-21T06:48:46Z
dc.date.available2017-04-21T06:48:46Z
dc.date.issued2016en_US
dc.description.abstractScalable synthesis of thin tungsten diselenide (WSe2) films on 4-inch silicon substrate with 80 nm silicon dioxide (SiO2) is demonstrated. Cross-sectional transmission electron microscopy (TEM) reveals good control of WSe2 layers. Raman spectroscopy confirms high quality crystal of WSe2 is achieved. Back-gated field-effect transistors (FETs) fabricated on these thin films exhibit p-channel characteristics with a good on/off current ratio larger than 1.2 x 10(2).en_US
dc.identifier.isbn978-1-5090-0726-4en_US
dc.identifier.journal2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/134674
dc.identifier.wosnumberWOS:000391250500023en_US
dc.language.isoen_USen_US
dc.titleSynthesis of Wafer-Scale WSe2 by WOx Selenization on SiO2 / Si Substratesen_US
dc.typeProceedings Paperen_US

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